Graphene possess unique properties for electronic and photonic applications, such as gate tunability, high carrier mobility, wide-band optical absorption extending into terahertz regime and compatibility with silicon processing technologies. Research in graphene device arena has progressed at a rapid pace, propelled by constant discoveries and maturing appreciation of the underlying graphene physics, advancement in processing technologies and most importantly, innovations. In this talk, I will review some of the exciting latest developments in graphene electronics and photonics. I would then provide a device physics perspective of what I think are some current issues limiting their performances and new opportunities going forward. Throughout this talk, I will draw extensively upon theoretical and modeling studies of our in-house experiments.
Here are some details of the talk. First, the internal and substrate polar optical phonons provide main energy dissipation pathway for optically excited carriers, and I will discuss our understanding of these energy loss channels and possibilities for more efficient graphene photodetectors and bolometers driven by hot electrons and phonons. Second, coupling of collective electronic excitations with these phonons were found leading to modified plasmon dispersions and losses, where long-lived hybrid plasmon-phonon coupled mode can be utilized in the terahertz to infrared spectrum for highly tunable plasmonic devices. Lastly, I will discuss how deformation and morphological structures found in large scale growth graphene can serve as dominant electronic scattering centers, compromising performance in high-speed electronic devices and the possibility of strain engineering for exploratory novel graphene electronics.