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"Phonon-assisted tunneling through a p-n junction in bilayer graphene"


Jianguang Yang , University of Virginia - Department of Physics
[Host: Dima Pesin]
ABSTRACT:

It was shown that elastic tunneling through a p-n junction in gapped bilayer graphene can lead to oscillatory transmission as a function of bandgap [1], where a combination of the semiclassical considerations and numerical calculations were used. In this talk, I will first present how we confirm the numerical results of that work analytically by using the method of steepest descents, where we treat the momentum as time in Schrödinger's equation in momentum space. In the presence of phonons, we then use a similar approach and generalize it to the phonon-assisted tunneling, I will discuss how the presence of phonons, and the associated inelastic processes, can contribute to the transport across the p-n junction in gapped bilayer graphene. Near zero temperature, I will show phonon can enhance the transmission when an electron emits or absorb a phonon and jump from one branch point to another, and the conductance will behave like a step function in terms of voltage where the conductance increases with the square root of voltage firstly and eventually becomes constant.

[1] R. Nandkishore and L. Levitov, Proceedings of the National Academy of Sciences 108, 14021 (2011)

Atomic Physics Seminar
Monday, April 25, 2022
3:30 PM
Ridley Hall, Room G006
Note special time.
Note special room.

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